发明名称 PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD OF MANUFACTURING DISPLAY APPARATUS USING THE SAME
摘要 A plasma-enhanced chemical vapor deposition (“PECVD”) apparatus includes: an ejecting unit which is configured to eject a gas toward a substrate onto which the gas is deposited; a lift which is configured to support and selectively raise or lower a mask unit in which is defined a pattern through which the gas ejected from the ejecting unit passes towards the substrate; and a susceptor into which a portion of the lift is inserted, and which is configured to linearly move the substrate. A temperature of the lift is variable.
申请公布号 US2015024147(A1) 申请公布日期 2015.01.22
申请号 US201314066842 申请日期 2013.10.30
申请人 Samsung Display Co., Ltd. 发明人 Lee Jung-Sik;Heo Myung-Su;Jung Seok-Won
分类号 C23C16/458 主分类号 C23C16/458
代理机构 代理人
主权项 1. A plasma-enhanced chemical vapor deposition apparatus comprising: an ejecting unit which is configured to eject a gas toward a substrate onto which the gas is deposited; a lift which is configured to support and selectively raise or lower a mask unit in which is defined a pattern through which the gas ejected from the ejecting unit passes towards the substrate, wherein a temperature of the lift is variable; and a susceptor into which a portion of the lift is inserted, and which is configured to linearly move the substrate.
地址 Yongin-City KR