| 发明名称 |
METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL |
| 摘要 |
A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state. |
| 申请公布号 |
US2015023862(A1) |
申请公布日期 |
2015.01.22 |
| 申请号 |
US201414500516 |
申请日期 |
2014.09.29 |
| 申请人 |
Mitsubishi Chemical Corporation ;Tohoku University ;The Japan Steel Works, Ltd. |
发明人 |
ISHIGURO Toru;BAO Quanxi;YOKOYAMA Chiaki;TOMIDA Daisuke;CHICHIBU Shigefusa;KAYANO Rinzo;UEDA Mutsuo;SAITO Makoto;KAGAMITANI Yuji |
| 分类号 |
C30B7/10;C30B29/40;C30B7/14 |
主分类号 |
C30B7/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state. |
| 地址 |
Chiyoda-ku JP |
