PLASMA PROCESSING APPARATUS AND OPERATIONAL METHOD THEREOF

摘要

A plasma processing apparatus includes: a detector configured to detect a change in an intensity of light emission from plasma formed inside a processing chamber; and a unit configured to adjust conditions for forming the plasma or processing a wafer arranged inside the processing chamber using an output from the detector, wherein the detector detects a signal of the intensity of light emission at plural time instants before an arbitrary time instant during processing, and wherein the adjusting unit removes the component of a temporal change of a long cycle of the intensity of light emission from this detected signal and detects the component of a short temporal change of the intensity of light emission, and adjusts the conditions for forming the plasma or processing a wafer arranged inside the processing chamber based on the short temporal change of the detected intensity of light emission.

主权项

1. A plasma processing apparatus, comprising:
a processing chamber which is disposed inside a vacuum vessel; a detector which is configured to detect a change in an intensity of light emission from plasma formed inside the processing chamber; and an adjusting unit which is configured to adjust conditions for forming the plasma or processing a wafer arranged inside the processing chamber using an output from the detector, wherein the detector detects a signal of the intensity of light emission at a plurality of time instants before an arbitrary time instant during processing, and wherein the adjusting unit removes a component of a temporal change of a long cycle of the intensity of light emission from this detected signal and detects a component of a short temporal change of the intensity of light emission, and further adjusts the conditions for forming the plasma or processing a wafer arranged inside the processing chamber based on the short temporal change of the detected intensity of light emission.