| 摘要 |
In a field-effect transistor, the carbon concentration on the high-resistance-layer (3) side of a buffer layer (2) is 0.8 × 1019/cm3 to 1.0 × 1021/cm3, the carbon concentration on the buffer-layer (2) side of the high-resistance layer (3) is 3.7 × 1018}/cm3 to 1.0 × 1021/cm3, and the carbon concentration on the channel-layer (4) side of the high-resistance layer (3) is 1.4 × 1019}/cm3 to 1.0 × 1021/cm3. |
