| 摘要 |
Provided is a crystalline oxide semiconductor thin film comprising only a bixbyite-structured In2O3 phase, suitable as a channel layer material for a thin film transistor, and having excellent etching properties in an amorphous state and a low carrier concentration and high carrier mobility in a crystalline state. An amorphous oxide thin film is formed using, as a target, an oxide sintered body which comprises indium, gallium, oxygen, and unavoidable impurities, the gallium content being in a range of 0.09 to 0.45 in terms of a Ga/(In + Ga) atomic ratio, has a In2O3 phase having a bixbyite structure as the main crystal phase, and has a GaInO3 phase having a &bgr;-Ga2O3-type structure, or a GaInO3 phase having a &bgr;-Ga2O3-type structure and a (Ga,In)2O3 phase finely dispersed therein. The amorphous oxide thin film is microfabricated by peforming etching using photolithography, and is annealed. |
