| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can hold memory contents even in a state where power is not supplied and has no limits in the number of rewritable times.SOLUTION: A semiconductor device comprises: a first transistor 160 having first wiring, second wiring, a first gate electrode, a first source electrode and a first drain electrode; and a second transistor 162 having third wiring, fourth wiring, a second gate electrode, a second source electrode and a second drain electrode, in which the first transistor 160 is provided on a substrate including a semiconductor material and the second transistor 162 includes an oxide semiconductor layer. |
