SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which forms a thickness of a photoresist layer with high accuracy and inhibit the occurrence of a microscopic piece.SOLUTION: In a process of irradiating an element substrate 2 having a semiconductor film 27 and a resist film 47 arranged on the semiconductor film 27 with exposure light 51 of a single wavelength through a halftone mask 48 to expose the resist film 47 and developing the exposed resist film 47 to reduce a thickness of the resist film 47, the halftone mask 48 has a semi-transmissive region 48b which transmits the exposure light 51 at a light intensity of attenuated exposure light. When assuming that reflectance at an interface between the resist film 47 and the semiconductor film 27 is R and an absorption coefficient of the resist film 47 is A, the following formulas (1) and (2) are satisfied: formula (1) S=(36×R)/A; formula (2) 1≤S≤37.