GATE ENCAPSULATION ACHIEVED BY SINGLE-STEP DEPOSITION

摘要

When forming spacer structures enclosing a gate electrode structure of a transistor, a common problem is given by the thickness variation of the spacer structure obtained as a result of a first deposition process performed in a first chamber and a second, subsequent process performed in a second chamber. The present disclosure provides a method for forming spacers of a well-defined thickness. The method relies on a single deposition step performed by means of an atomic layer deposition. The deposition is performed in two stages performed at different temperatures.

主权项

1. A method of forming a transistor structure, comprising:
forming a gate structure on an active region of a semiconductor layer; and performing an atomic layer deposition so as to deposit an insulating layer adapted to be formed as a spacer structure on the sidewalls of said gate structure; wherein said step of performing said atomic layer deposition comprises:
performing a first deposition stage at a first temperature; andperforming a second deposition stage at a second temperature after said first deposition stage, said second temperature being higher than said first temperature;wherein said first and second deposition stages of said atomic layer deposition are performed within the same deposition chamber.