发明名称 MEMORY REFRESH METHODS, MEMORY SECTION CONTROL CIRCUITS, AND APPARATUSES
摘要 Apparatuses, memory section control circuits, and methods of refreshing memory are disclosed. An example apparatus includes a plurality of memory sections and a plurality of memory section control circuits. Each memory section control circuit is coupled to a respective one of the plurality of memory sections and includes a plurality of access line drivers, each of which includes a plurality of transistors having common coupled gates. During an operation of the apparatus a first voltage is provided to the commonly coupled gates of the transistors of at least some of the access line drivers of the memory section control circuit coupled to an active memory section and a second voltage is provided to the commonly coupled gates of the transistors of the access line drivers of the memory section control circuit coupled to an inactive memory section control circuit, wherein the first voltage is greater than the second voltage.
申请公布号 US2015023121(A1) 申请公布日期 2015.01.22
申请号 US201414505717 申请日期 2014.10.03
申请人 Micron Technology, Inc. 发明人 Porter John David;Kim Gi-Hong
分类号 G11C11/402;G11C8/10;G11C8/08;G11C5/14;G11C11/408 主分类号 G11C11/402
代理机构 代理人
主权项 1. An apparatus, comprising: a memory section control circuit coupled to a memory section, the memory section control circuit configured to provide a first voltage to the memory section while the memory section is active during a self-refresh operation and to selectively provide the second voltage to the memory section while the memory section is inactive during the self-refresh operation.
地址 Boise ID US