发明名称 |
RADIATION IMAGE PICKUP UNIT AND RADIATION IMAGE PICKUP DISPLAY SYSTEM |
摘要 |
A radiation image pickup unit includes: a plurality of pixels each configured to generate a signal charge based on a radiation; and a field effect transistor to readout the signal charges from the plurality of pixels. The transistor includes a semiconductor layer including an active layer, a first gate electrode disposed to face the semiconductor layer, a first gate insulating film provided between the semiconductor layer and the first gate electrode, and including a first silicon oxide film, a source electrode and a drain electrode that are electrically connected to the semiconductor layer, and a second silicon oxide film provided in a layer different from the first gate insulating film. The first silicon oxide film of the first gate insulating film is a porous film lower in film density than the second silicon oxide film. |
申请公布号 |
US2015021674(A1) |
申请公布日期 |
2015.01.22 |
申请号 |
US201414320777 |
申请日期 |
2014.07.01 |
申请人 |
Sony Corporation |
发明人 |
Yamada Yasuhiro;Takatoku Makoto |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
1. A radiation image pickup unit comprising:
a plurality of pixels each configured to generate a signal charge based on a radiation; and a field effect transistor to readout the signal charges from the plurality of pixels, wherein the transistor includes a semiconductor layer including an active layer, a first gate electrode disposed to face the semiconductor layer, a first gate insulating film provided between the semiconductor layer and the first gate electrode, and including a first silicon oxide film, a source electrode and a drain electrode that are electrically connected to the semiconductor layer, and a second silicon oxide film provided in a layer different from the first gate insulating film, and the first silicon oxide film of the first gate insulating film is a porous film lower in film density than the second silicon oxide film. |
地址 |
Tokyo JP |