发明名称 RADIATION IMAGE PICKUP UNIT AND RADIATION IMAGE PICKUP DISPLAY SYSTEM
摘要 A radiation image pickup unit includes: a plurality of pixels each configured to generate a signal charge based on a radiation; and a field effect transistor to readout the signal charges from the plurality of pixels. The transistor includes a semiconductor layer including an active layer, a first gate electrode disposed to face the semiconductor layer, a first gate insulating film provided between the semiconductor layer and the first gate electrode, and including a first silicon oxide film, a source electrode and a drain electrode that are electrically connected to the semiconductor layer, and a second silicon oxide film provided in a layer different from the first gate insulating film. The first silicon oxide film of the first gate insulating film is a porous film lower in film density than the second silicon oxide film.
申请公布号 US2015021674(A1) 申请公布日期 2015.01.22
申请号 US201414320777 申请日期 2014.07.01
申请人 Sony Corporation 发明人 Yamada Yasuhiro;Takatoku Makoto
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项 1. A radiation image pickup unit comprising: a plurality of pixels each configured to generate a signal charge based on a radiation; and a field effect transistor to readout the signal charges from the plurality of pixels, wherein the transistor includes a semiconductor layer including an active layer, a first gate electrode disposed to face the semiconductor layer, a first gate insulating film provided between the semiconductor layer and the first gate electrode, and including a first silicon oxide film, a source electrode and a drain electrode that are electrically connected to the semiconductor layer, and a second silicon oxide film provided in a layer different from the first gate insulating film, and the first silicon oxide film of the first gate insulating film is a porous film lower in film density than the second silicon oxide film.
地址 Tokyo JP