发明名称 SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor element and the like, which has high quantum efficiency within a region from near infrared to infrared.SOLUTION: A semiconductor element comprises: a substrate 1; a plurality of pairs of multiquantum well structures 3 by coupling an a layer and a b layer as one pair; and a crystal adjustment layer 2 located between the substrate 1 and the multiquantum well structure 3. The crystal adjustment layer 2 includes: a first adjustment layer 2a which is composed of a material the same with that of the substrate 1 and contacts the substrate 1; and a second adjustment layer 2b which is composed of a material the same with the a layer or the b layer and contacts the multiquantum well layer.
申请公布号 JP2015015306(A) 申请公布日期 2015.01.22
申请号 JP20130140001 申请日期 2013.07.03
申请人 SUMITOMO ELECTRIC IND LTD 发明人 SHIBATA KAORU;AKITA KATSUSHI;FUJII KEI;ISHIZUKA TAKASHI
分类号 H01L31/10 主分类号 H01L31/10
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