发明名称 |
SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element and the like, which has high quantum efficiency within a region from near infrared to infrared.SOLUTION: A semiconductor element comprises: a substrate 1; a plurality of pairs of multiquantum well structures 3 by coupling an a layer and a b layer as one pair; and a crystal adjustment layer 2 located between the substrate 1 and the multiquantum well structure 3. The crystal adjustment layer 2 includes: a first adjustment layer 2a which is composed of a material the same with that of the substrate 1 and contacts the substrate 1; and a second adjustment layer 2b which is composed of a material the same with the a layer or the b layer and contacts the multiquantum well layer. |
申请公布号 |
JP2015015306(A) |
申请公布日期 |
2015.01.22 |
申请号 |
JP20130140001 |
申请日期 |
2013.07.03 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
SHIBATA KAORU;AKITA KATSUSHI;FUJII KEI;ISHIZUKA TAKASHI |
分类号 |
H01L31/10 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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