| 摘要 |
<p>PROBLEM TO BE SOLVED: To suppress generation of a void in an element isolation insulating film.SOLUTION: The semiconductor device comprises: a substrate; a first active region formed in the substrate, which includes a first region having a first width and a second region having a second width larger than the first width and extends in a first direction; a second active region formed in the substrate, which extends in a second direction extending parallel to the second region of the first active region; and an element isolation insulating film formed in the substrate, which defines each of the first and second active regions. The second region of the first active region or the second active region has a recessed shape that is recessed toward the second direction intersecting with the first direction in a planar view.</p> |
