发明名称 |
SELF-ALIGNED GATE BURIED CHANNEL FIELD EFFECT TRANSISTOR |
摘要 |
<p>This disclosure provides a transistor device formed on a wide band gap substrate. The transistor device includes a channel layer and a gate structure physically coupled to the channel layer. The gate structure can be formed on the channel layer using an epitaxial process instead of a lithographic process, thereby providing a mechanism to build small semiconductor features that are smaller than a resolution of the state-of-the-art lithographic process and reducing the amount of impurities between the channel layer and the gate structure.</p> |
申请公布号 |
WO2015010121(A1) |
申请公布日期 |
2015.01.22 |
申请号 |
WO2014US47422 |
申请日期 |
2014.07.21 |
申请人 |
RAMGOSS, INC. |
发明人 |
ADEKORE, BUNMI, T.;MARCHAND, HUGUES |
分类号 |
H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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