METHOD OF MANUFACTURING CERIUM BASED POLISHING PARTICLE AND THE CERIUM BASED POLISHING PARTICLE THEREOF

摘要

The present invention relates to a method for manufacturing cerium-based polishing particles and cerium-based polishing particles thereby. The method for manufacturing cerium-based polishing particles and cerium-based polishing particles thereby according to the present invention are capable of controlling shapes and sizes of cerium-based polishing particles according to synthesis temperature, synthesis time, calcination temperature and calcination time of a mixture, exhibit excellent polishing rate and selectivity in CMP polishing and are capable of reducing defects and scratches, thereby improving productivity in semiconductor device manufacture.