SUBSTRATE PROCESSING METHOD, AND CONTROL DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a substrate processing method capable of controlling an etching amount to a desired one in an etching process within a vertical substrate processing apparatus.SOLUTION: A substrate processing method uses a control device for controlling actuation of a vertical substrate processing apparatus having: a processing container in which a substrate holder for holding a plurality of substrates in multiple stages at predetermined intervals; a heater for heating inside of the processing container; an etching gas introduction part for introducing deposition gas and etching gas into the processing container; and an exhaust part for exhausting the inside of the processing container. The substrate processing method includes: a calculation process for calculating an etching condition by the control device so that an etching amount of a deposition material on the substrate, on which a predetermined uneven pattern is formed in advance and the deposition material is deposited in a recessed part of the pattern, becomes a desired etching amount; and a treatment process for applying etching treatment to the substrate based on the calculated etching condition.