ELECTROSTATIC DISCHARGE DAMAGE PROTECTION CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide an electrostatic discharge damage protection circuit capable of adjusting a holding voltage and a snap-back voltage to designed values.SOLUTION: An electrostatic discharge damage protection element is made of a bipolar transistor. An embedment area configuring a collector region is separated into at least two regions, and a dimension A1 between the separated embedment areas is properly set. Thus, a snap-back voltage is adjusted to a predetermined value. The number of the separated collector regions is properly set so that a holding voltage can be adjusted to a predetermined value.