| 发明名称 |
LIFT-OFF OF EPITAXIAL LAYERS FROM SILICON CARBIDE OR COMPOUND SEMICONDUCTOR SUBSTRATES |
| 摘要 |
A method to remove epitaxial semiconductor layers from a substrate by growing an epitaxial sacrificial layer on the substrate where the sacrificial layer is a transition metal nitride (TMN) or a TMN ternary compound, growing one or more epitaxial device layers on the sacrificial layer, and separating the device layers from the substrate by etching the sacrificial layer to completely remove the sacrificial layer without damaging or consuming the substrate or any device layer. Also disclosed are the related semiconductor materials made by this method. |
| 申请公布号 |
US2015021624(A1) |
申请公布日期 |
2015.01.22 |
| 申请号 |
US201414331440 |
申请日期 |
2014.07.15 |
| 申请人 |
Meyer David J.;Downey Brian P. |
发明人 |
Meyer David J.;Downey Brian P. |
| 分类号 |
H01L21/306;H01L29/20;H01L29/16;H01L21/762 |
主分类号 |
H01L21/306 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method to remove epitaxial semiconductor layers from a substrate, comprising:
growing an epitaxial sacrificial layer on the substrate, wherein the sacrificial layer comprises a transition metal nitride (TMN) or a TMN ternary compound; growing one or more epitaxial device layers on the sacrificial layer; and separating the device layers from the substrate by etching the sacrificial layer to completely remove the sacrificial layer without damaging or consuming the substrate or any device layer. |
| 地址 |
Fairfax VA US |
