发明名称 BAFFLE AND APPARATUS FOR TREATING SURFACE OF BAFFLE, AND SUBSTRATE TREATING APPARATUS
摘要 The present invention relates to a substrate treating apparatus, and more particularly, to an apparatus treating a substrate using plasma. In an embodiment, a baffle is formed with holes distributing a process gas excited to a plasma state, and has a surface which is treated with a surface treating material comprising a silicon compound.
申请公布号 US2015020974(A1) 申请公布日期 2015.01.22
申请号 US201313946162 申请日期 2013.07.19
申请人 PSK INC. 发明人 JI YoungYeon
分类号 H05H15/00 主分类号 H05H15/00
代理机构 代理人
主权项 1. A baffle which is formed with holes designed for distributing a process gas excited to a plasma state, the baffle having a surface which is treated with a surface treating material comprising a silicon compound.
地址 Gyeonggi-do KR