| 摘要 |
<p>A system and method for determining the thin-film stress of a multi-layered film. The present invention relates to the field of thin-film stress measurement technology used in the process of manufacturing integrated circuits and micro-electro-mechanical systems. In the present invention, thin-film material is used as a multi-layered plate/shell structure to create a mechanical model, so as to define the deflection, cross-section rotation angle, and in-midplane offset or curvature change on the midplane of the plate/shell structure; and a linear or nonlinear geometric relationship is used to describe the deformation of the thin-film material. A shape-measurement device is used to measure, layer by layer, the deformation of the thin-film material caused by thin-film stress. A plate/shell structure finite element is used to discretize a detected object; a direct measurement or indirect interpolation method is used to provide a measurement value of the degree of freedom for all or some of the finite element nodes; a condition is established for the least squares fit between the deformation yielded by the measurement and the deformation produced by thin-film stress at certain nodes; and linear or nonlinear iterative calculation is used to find the thin-film stress of each layer of film. With a certain temperature change, linear or nonlinear temperature mismatch stress of the thin-film material can be calculated.</p> |
