发明名称 METHOD FOR MANUFACTURING OF CATHODE ELECTRODE PLATE
摘要 Disclosed is a method to manufacture a cathode electrode plate. The cathode electrode plate manufacturing method according to an embodiment of the present invention includes; an ingot cutting step of cutting an ingot, which is to be manufactured as a cathode electrode plate, at a specific length; an ingot flattening step of flattening the upper and lower sides of the cut ingot; a lateral side processing step of processing the lateral side of the flattened ingot; an appearance processing step of forming the appearance of the cathode electrode plate in the ingot where the processing of the lateral side is performed; a drilling step of processing a gas passage hole, where plasma gas passes, in the cathode electrode plate where the appearance processing step is performed; and a polishing step of polishing the upper and lower sides of the cathode electrode plate where the drilling is completed.
申请公布号 KR101485123(B1) 申请公布日期 2015.01.22
申请号 KR20130144700 申请日期 2013.11.26
申请人 HANA SILICON, INC. 发明人 PARK, JIN KYOUNG;KIM, YONG UK
分类号 H05H1/34 主分类号 H05H1/34
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