LIGHT EMITTING ELEMENT

摘要

This light emitting element has: a light emitting section that includes a first conductivity-type first semiconductor layer, an active layer, and a second conductivity-type second semiconductor layer in this order; a supporting substrate that is provided on the first semiconductor layer side of the light emitting section; a reflecting layer section that is provided between the supporting substrate and the light emitting section; and a transparent conductive film or a dielectric film, which is provided between the reflecting layer section and the light emitting section. The light emitting element is characterized in that: the light emitting element also has a bonding pad section that is provided on a light extraction surface on the second semiconductor layer side of the light emitting section, a fine line electrode section, which is provided on the light extraction surface, and is electrically connected to the bonding pad section, and which extends in the first direction, and an ohmic contact section that is provided on the reflecting layer side of the light emitting section; the ohmic contact section is configured from first contact sections extending in the first direction, and second contact sections extending in the second direction perpendicular to the first direction; and a total of a length of a first contact section disposed at a smallest interval from the fine line electrode, said length being in the first direction, and a length of a second contact section disposed at a smallest interval from the fine line electrode, said length being in the second direction, is equal to or more than 1,300μm. Consequently, the light emitting element, which has the transparent conductive film or the dielectric film between the light emitting layer and the reflecting layer, and which also has the ohmic contact section in a region of a part of in the transparent conductive film or the dielectric film, is provided, said light emitting element having improved ESD resistance.