| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a new structure.SOLUTION: A semiconductor device comprises: an oxide semiconductor layer including a crystalline region on an insulating surface; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a gate insulating layer covering the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer on the gate insulating layer in a region overlapping with the crystalline region. The crystalline region is a region including crystal having an aligned c-axis in a direction substantially perpendicular to a surface of the oxide semiconductor layer. |
