| 摘要 |
PROBLEM TO BE SOLVED: To provide a trench gate type semiconductor device in which a wide band gap semiconductor is used as a main semiconductor substrate, a cell pitch can be reduced, excellent ohmic contact can be obtained, and an excessive electric field is not applied to an insulating film in a bottom of a trench.SOLUTION: In a method for manufacturing a trench gate type MOSFET, as a method for forming an intersection trench 10p, a gate trench 10b is formed as a double trench structure. Then, the gate trench 10b is backfilled with a mask material, and the mask material is then patterned, and the patterned mask material is used as a mask for forming the intersection trench. The intersection trench 10p intersecting the gate trench is provided so as to be deeper than the gate trench 10b. A Schottky electrode 24 is provided in a bottom of the intersection trench 10p. |
