发明名称 |
FRONT-TO-BACK BONDING WITH THROUGH-SUBSTRATE VIA (TSV) |
摘要 |
Embodiments of mechanisms of forming a semiconductor device structure are provided. The semiconductor device structure includes a first semiconductor wafer and a second semiconductor wafer. The first semiconductor wafer includes a first transistor formed in a front-side of the first semiconductor wafer, and the second semiconductor wafer includes a second transistor formed in a front-side of the second semiconductor wafer. A backside of the second semiconductor wafer is bonded to the front-side of the first semiconductor wafer. The semiconductor device structure further includes an interconnect structure formed over the front-side of the second semiconductor wafer, and at least one first through substrate via (TSV) directly contacts a conductive feature of the first semiconductor wafer and the interconnect structure. |
申请公布号 |
US2015021784(A1) |
申请公布日期 |
2015.01.22 |
申请号 |
US201313943157 |
申请日期 |
2013.07.16 |
申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
LIN Jing-Cheng |
分类号 |
H01L23/48;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device structure, comprising:
a first semiconductor wafer comprising a first transistor formed in a front-side of the first semiconductor wafer; a second semiconductor wafer comprising a second transistor formed in a front-side of the second semiconductor wafer, wherein a backside of the second semiconductor wafer is bonded to the front-side of the first semiconductor wafer; an interconnect structure formed over the front-side of the second semiconductor wafer; and at least one first through substrate via (TSV) directly contacts a conductive feature of the first semiconductor wafer and the interconnect structure. |
地址 |
Hsin-Chu TW |