| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND APPARATUS FOR PRODUCING SEMICONDUCTOR |
| 摘要 |
A method for manufacturing a semiconductor device for forming a metal element-containing layer on an insulating layer in which a concave portion is formed, includes: forming an oxide layer including mainly an oxide of the metal element on the insulating layer including the concave portion; and forming a silicate layer including mainly a silicate of the metal element by making the oxide layer into silicate by annealing under a reducing atmosphere. |
| 申请公布号 |
US2015021775(A1) |
申请公布日期 |
2015.01.22 |
| 申请号 |
US201414510388 |
申请日期 |
2014.10.09 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
MATSUMOTO Kenji;HAMADA Tatsufumi;MAEKAWA Kaoru |
| 分类号 |
H01L23/532;H01L21/02;C23C16/455;C23C16/06;C23C16/50;C23C16/46;H01L21/768;C23C16/40 |
主分类号 |
H01L23/532 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a semiconductor device for forming a metal element-containing layer on an insulating layer in which a concave portion is formed, comprising:
forming an oxide layer including an oxide of the metal element on the insulating layer including the concave portion; and forming a silicate layer including a silicate of the metal element by making the oxide layer silicate by annealing under a reducing atmosphere. |
| 地址 |
Tokyo JP |
