发明名称 |
SEMICONDUCTOR DEVICE HAVING BURIED CHANNEL ARRAY AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A semiconductor device and a method of fabricating a semiconductor device, the device including an active region on a substrate, the active region being defined by a field region; gate trenches in the active region of the substrate; gate structures respectively formed in the gate trenches; and at least one carrier barrier layer in the substrate and under the gate trenches. |
申请公布号 |
US2015021684(A1) |
申请公布日期 |
2015.01.22 |
申请号 |
US201414254576 |
申请日期 |
2014.04.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE Dong-Jin;LIM Jun-Hee;KIM Kyung-Eun |
分类号 |
H01L29/78;H01L29/66;H01L29/423 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
1. A semiconductor device, comprising:
an active region on a substrate, the active region being defined by a field region; gate trenches in the active region of the substrate; gate structures respectively formed in the gate trenches; and at least one carrier barrier layer in the substrate and under the gate trenches. |
地址 |
Suwon-si KR |