发明名称 SEMICONDUCTOR DEVICE HAVING BURIED CHANNEL ARRAY AND METHOD OF MANUFACTURING THE SAME
摘要 A semiconductor device and a method of fabricating a semiconductor device, the device including an active region on a substrate, the active region being defined by a field region; gate trenches in the active region of the substrate; gate structures respectively formed in the gate trenches; and at least one carrier barrier layer in the substrate and under the gate trenches.
申请公布号 US2015021684(A1) 申请公布日期 2015.01.22
申请号 US201414254576 申请日期 2014.04.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE Dong-Jin;LIM Jun-Hee;KIM Kyung-Eun
分类号 H01L29/78;H01L29/66;H01L29/423 主分类号 H01L29/78
代理机构 代理人
主权项 1. A semiconductor device, comprising: an active region on a substrate, the active region being defined by a field region; gate trenches in the active region of the substrate; gate structures respectively formed in the gate trenches; and at least one carrier barrier layer in the substrate and under the gate trenches.
地址 Suwon-si KR