| 发明名称 |
PHOTOSENSITIVE CELL OF AN IMAGE SENSOR |
| 摘要 |
An image sensor cell formed inside and on top of a substrate of a first conductivity type includes: a storage region of the second conductivity type; a read region of the second conductivity type; a transfer region located between the storage region and the read region; and a transfer gate topping the transfer region and which does not or does not totally top the storage region. The transfer region comprises a first area of the first conductivity type in the vicinity of the storage region, and a second area of the second conductivity type extending between the first area and the read region. |
| 申请公布号 |
US2015021668(A1) |
申请公布日期 |
2015.01.22 |
| 申请号 |
US201414335565 |
申请日期 |
2014.07.18 |
| 申请人 |
STMicroelectronics SA ;STMicroelectronics (Crolles 2) SAS |
发明人 |
Roy Francois;Michelot Julien;Mazoyer Pascale |
| 分类号 |
H01L27/146;H01L27/148 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An image sensor cell, comprising:
a storage region formed in a semiconductor substrate of a first conductivity type, the storage region being of a second conductivity type; a read region of the second conductivity type formed in the substrate; a transfer region located between the storage region and the read region; and a transfer gate completely topping the transfer region and which does not or does not totally top the storage region, wherein the transfer region comprises a first area of the first conductivity type adjacent to the storage region, and a second area of the second conductivity type extending between the first area and the read region. |
| 地址 |
Montrouge FR |
