INTEGRATED CIRCUIT AND METHOD OF FORMING THE INTEGRATED CIRCUIT

摘要

In described examples, an integrated circuit (100) includes a substrate (110) having a first conductivity type, a logic region, and a memory region. A trench isolation structure (112) touches the substrate (110). A logic transistor (114) has: a logic gate dielectric (126) that touches and lies over the logic region of the substrate (110); and a logic gate (130) that touches and lies over the logic gate dielectric (126). A memory transistor (116) has: a memory gate dielectric (146) that touches and lies over the memory region of the substrate (110); and a memory gate (150) that touches and lies over the memory gate dielectric (146). A resistor (118) touches and lies over the trench isolation structure (112). The resistor (118) has a dopant concentration that is substantially equal to a dopant concentration of the memory gate (150) and substantially less than a dopant concentration of the logic gate (130).