发明名称 PLASMA PROCESSING APPARATUS, AND PLASMA DISTRIBUTION CONTROL METHOD
摘要 PROBLEM TO BE SOLVED: To provide an inductively-coupled plasma processing apparatus which enables the suppression of sputter erosion of a metal window owing to plasma, and the control of strength distribution of the plasma.SOLUTION: A plasma processing apparatus 100 for processing a substrate G by plasma comprises: a high-frequency antenna 11 for generating inductively coupled plasma in a plasma-generating region; and a metal window 3 disposed between the plasma-generating region and the high-frequency antenna 11, and isolated from a main body container. The metal window 3 has metal windows 30a-30d isolated from each other by an insulator; each of the metal windows 30a-30d is connected to the ground at a ground point.
申请公布号 JP2015015342(A) 申请公布日期 2015.01.22
申请号 JP20130140649 申请日期 2013.07.04
申请人 TOKYO ELECTRON LTD 发明人 SASAKI KAZUO;SAITO HITOSHI;YAMAZAWA YOHEI;FURUYA ATSUKI;NAITO HIROSHI
分类号 H01L21/3065;C23C16/505;H05H1/46 主分类号 H01L21/3065
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