发明名称 |
PLASMA PROCESSING APPARATUS, AND PLASMA DISTRIBUTION CONTROL METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide an inductively-coupled plasma processing apparatus which enables the suppression of sputter erosion of a metal window owing to plasma, and the control of strength distribution of the plasma.SOLUTION: A plasma processing apparatus 100 for processing a substrate G by plasma comprises: a high-frequency antenna 11 for generating inductively coupled plasma in a plasma-generating region; and a metal window 3 disposed between the plasma-generating region and the high-frequency antenna 11, and isolated from a main body container. The metal window 3 has metal windows 30a-30d isolated from each other by an insulator; each of the metal windows 30a-30d is connected to the ground at a ground point. |
申请公布号 |
JP2015015342(A) |
申请公布日期 |
2015.01.22 |
申请号 |
JP20130140649 |
申请日期 |
2013.07.04 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
SASAKI KAZUO;SAITO HITOSHI;YAMAZAWA YOHEI;FURUYA ATSUKI;NAITO HIROSHI |
分类号 |
H01L21/3065;C23C16/505;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|