| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas capturing body capable of suppressing the occurrence of foreign matters without lowering an operation rate, and a semiconductor manufacturing apparatus provided with the same.SOLUTION: A decompression vapor-phase growth device 1 has a gas capturing body 16 for capturing a material gas flowing from the side of a front flange 4 arranged between a boat 14 and a rear flange 5 mounted on a semiconductor wafer. The gas capturing body 16 is formed of one cylindrical large-diameter quartz tube, and a plurality of cylindrical fine quartz tubes. The plurality of fine quartz tubes are arranged inside the large-diameter quartz tube. Each of the plurality of fine quartz tubes is not adhered to each other, and is arranged by being sequentially mounted on the inner wall of the horizontally arranged large-diameter quartz tube. |
