METAL-OXIDE-SEMICONDUCTOR (MOS) DEVICES WITH INCREASED CHANNEL PERIPHERY AND METHODS OF MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide metal-oxide-semiconductor (MOS) devices with an increased channel periphery and methods of manufacture.SOLUTION: A semiconductor device includes a silicon carbide (SiC) drift layer 16 disposed on a (0001) oriented SiC substrate 14. The SiC drift layer 16 has a non-planar surface including a plurality of repeating features 54 that are oriented parallel to a length of a channel of the semiconductor device. Further, a channel region 28 is disposed in a particular crystallographic plane of the SiC drift layer 16. By this configuration, device resistance is reduced.