METHOD OF WRITING TO A SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY

摘要

Circuitry and a method provide an increased tunnel barrier endurance (lifetime) previously shortened by dielectric breakdown by providing a pulse of opposite polarity associated with a write pulse. The pulse of opposite polarity may comprise equal or less width and amplitude than that of the write pulse, may be applied with each write pulse or a series of write pulses, and may be applied prior to or subsequent to the write pulse.

主权项

1. A method of providing one of a write pulse for writing to a plurality of bits or a read pulse for reading the plurality of bits in a spin-torque magnetoresistive memory array, the method comprising:
providing a charging pulse to the bits, the charging pulse having an opposite polarity from the write pulse sequence or the read pulse.