MECHANISMS FOR FORMING THREE-DIMENSIONAL INTEGRATED CIRCUIT (3DIC) STACKING STRUCTURE

摘要

Embodiments of mechanisms of forming a semiconductor device are provided. The semiconductor device includes a first semiconductor wafer comprising a first transistor formed in a front-side of the first semiconductor wafer. The semiconductor device also includes a second semiconductor wafer comprising a second transistor formed in a front-side of the second semiconductor wafer, and a backside of the second semiconductor wafer is bonded to the front-side of the first semiconductor wafer. The semiconductor device further includes an first interconnect structure formed between the first semiconductor wafer and the second semiconductor wafer, and the first interconnect structure comprises a first cap metal layer formed over a first conductive feature. The first interconnect structure is electrically connected to first transistor, and the first cap metal layer is configured to prevent diffusion and cracking of the first conductive feature.

主权项

1. A semiconductor device structure, comprising:
a first semiconductor wafer comprising a first transistor formed in a front-side of the first semiconductor wafer; a second semiconductor wafer comprising a second transistor formed in a front-side of the second semiconductor wafer, wherein a backside of the second semiconductor wafer is bonded to the front-side of the first semiconductor wafer; and a first interconnect structure formed between the first semiconductor wafer and the second semiconductor wafer, wherein the first interconnect structure comprises a first cap metal layer formed over a first conductive feature, and the first interconnect structure is electrically connected to the first transistor, wherein the first cap metal layer is configured to prevent diffusion and cracking of the first conductive feature.