INTEGRATED CIRCUITS HAVING REPLACEMENT METAL GATES WITH IMPROVED THRESHOLD VOLTAGE PERFORMANCE AND METHODS FOR FABRICATING THE SAME

摘要

Integrated circuits having replacement metal gates with improved threshold voltage performance and methods for fabricating such integrated circuits are provided. A method includes providing a dielectric layer overlying a semiconductor substrate. The dielectric layer has a first and a second trench. A gate dielectric layer is formed in the first and second trench. A first barrier layer is formed overlying the gate dielectric layer. A work function material layer is formed within the trenches. The work function material layer and the first barrier layer are recessed in the first and second trench. The work function material layer and the first barrier layer form a chamfered surface. The gate dielectric layer is recessed in the first and second trench. A conductive gate electrode material is deposited such that it fills the first and second trench. The conductive gate electrode material is recessed in the first and second trench.

主权项

1. A method for fabricating an integrated circuit, the method comprising:
providing a dielectric layer overlying a semiconductor substrate, the dielectric layer having a first trench and a second trench; forming a gate dielectric layer in the first trench and the second trench; forming a first barrier layer overlying the gate dielectric layer; forming a work function material layer within the first trench and the second trench; recessing the work function material layer and the first barrier layer in the first trench and the second trench, wherein the work function material layer and the first barrier layer form a chamfered surface relative to a planar surface of the semiconductor substrate; recessing the gate dielectric layer in the first trench and the second trench; depositing a conductive gate electrode material such that it fills the first trench and the second trench; and recessing the conductive gate electrode material in the first trench and the second trench.