| 发明名称 |
ASYMMETRICAL REPLACEMENT METAL GATE FIELD EFFECT TRANSISTOR |
| 摘要 |
An asymmetrical field effect transistor (FET) device includes a semiconductor substrate, a buried oxide layer disposed on the semiconductor substrate, an extended source region disposed on the buried oxide layer and a drain region disposed on the buried oxide layer. The asymmetrical FET device also includes a silicon on insulator region disposed between the extended source region and the drain region and a gate region disposed above the extended source region and the silicon on insulator region. |
| 申请公布号 |
US2015021689(A1) |
申请公布日期 |
2015.01.22 |
| 申请号 |
US201313945076 |
申请日期 |
2013.07.18 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Basker Veeraraghavan S.;Yamashita Tenko;Yeh Chun-Chen |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An asymmetrical field effect transistor (FET) device comprising:
a semiconductor substrate; a buried oxide layer disposed on the semiconductor substrate; an extended source region disposed on the buried oxide layer; a drain region disposed on the buried oxide layer; a silicon on insulator region disposed between the extended source region and the drain region; a gate region disposed above the extended source region and the silicon on insulator region, wherein the gate region overlaps a portion of the extended source region and wherein the drain region is not overlapped by the gate region. |
| 地址 |
Armonk NY US |
