发明名称 |
High Electron Mobility Transistor and Method of Forming the Same |
摘要 |
A semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A carrier channel is located between the first III-V compound layer and the second III-V compound layer. A source feature and a drain feature are disposed on the second III-V compound layer. A gate electrode is disposed over the second III-V compound layer between the source feature and the drain feature. A fluorine region is embedded in the second III-V compound layer under the gate electrode. A diffusion barrier layer is disposed on top of the second III-V compound layer. A gate dielectric layer is disposed over the second III-V compound layer. The gate dielectric layer has a fluorine segment on the fluorine region and under at least a portion of the gate electrode. |
申请公布号 |
US2015021667(A1) |
申请公布日期 |
2015.01.22 |
申请号 |
US201414511627 |
申请日期 |
2014.10.10 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Liu Po-Chun;Yu Chung-Yi;Chen Chi-Ming |
分类号 |
H01L29/778;H01L29/20;H01L21/02;H01L29/205;H01L29/423;H01L21/768;H01L29/66;H01L29/201 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor structure comprising:
a first III-V compound layer; a second III-V compound layer disposed on the first III-V compound layer and different from the first III-V compound layer in composition; a third III-V compound layer disposed over the second III-V compound layer, wherein a diffusion barrier layer is interposed between the second III-V compound layer and the third III-V compound layer; and a source contact and a drain contact disposed on the second III-V compound layer, wherein the third III-V compound layer is interposed between the source contact and the drain contact. |
地址 |
Hsin-Chu TW |