| 发明名称 |
TRANSISTOR HAVING BACK-BARRIER LAYER AND METHOD OF MAKING THE SAME |
| 摘要 |
A transistor includes a substrate, a channel layer over the substrate, a back-barrier layer over the channel layer, and an active layer over the back-barrier layer. The back-barrier layer has a band gap discontinuity with the channel layer. The band gap of the active layer is less than the band gap of the back-barrier layer. A two dimensional electron gas (2-DEG) is formed in the channel layer adjacent an interface between the channel layer and the back-barrier layer. |
| 申请公布号 |
US2015021665(A1) |
申请公布日期 |
2015.01.22 |
| 申请号 |
US201313944584 |
申请日期 |
2013.07.17 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN Chi-Ming;LIU Po-Chun;CHIANG Chen-Hao;CHING Ming-Chang;LIU Ming-Chyi;YU Chung-Yi |
| 分类号 |
H01L29/778;H01L29/66 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A transistor comprising:
a substrate; a channel layer over the substrate; a back-barrier layer over the channel layer, the back-barrier layer having a band gap discontinuity with the channel layer; an active layer over the back-barrier layer, a band gap of the active layer being less than the band gap of the back-barrier layer; a two dimensional electron gas (2-DEG) in the channel layer adjacent an interface between the channel layer and the back-barrier layer; and a source electrode and a drain electrode over the channel layer, wherein a portion of at least one of the source electrode or the drain electrode is embedded in the channel layer. |
| 地址 |
Hsinchu TW |
