发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE
摘要 <p>A semiconductor device manufacturing method includes loading a substrate, on which a high-k film is formed, into a processing chamber, performing a reforming process by heating the high-k film through irradiation of a microwave on the substrate, and unloading the substrate from the processing chamber.</p>
申请公布号 KR101485628(B1) 申请公布日期 2015.01.22
申请号 KR20110100908 申请日期 2011.10.04
申请人 发明人
分类号 H01L21/268;H01L21/3105;H01L21/324 主分类号 H01L21/268
代理机构 代理人
主权项
地址