| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a hafnium oxide ferroelectric film or a ferridielectric film, which has a low coercive electric field.SOLUTION: A semiconductor device of an embodiment comprises: a first conductive layer; a second conductive layer; and a hafnium oxide ferroelectric film or a ferridielectric film, which is provided between the first conductive layer and the second conductive layer and contains at least one element A selected from Zn, Mg, Mn, Nb, Sc, Fe, Cr, Co, In, Li and N. |
