| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemically amplified negative resist composition for an electron beam or EUV light, which can give uniform diffusion of a base, can improve line edge roughness, can suppress deactivation of an acid on a substrate interface, and shows a reduced degree of undercut in the process of forming a resist pattern where an ultrafine pattern is demanded.SOLUTION: The chemically amplified negative resist composition for electron beam or EUV lithography comprises (A) an alkali-soluble polymeric compound, (B) an acid generator, and (C) a compound containing nitrogen as a basic component, in which the polymeric compound of the component (A) is turned into alkali insoluble by an acid catalyst generated from the acid generator in the presence or absence of a crosslinking agent. The composition contains a basic polymer (PB) having a recurring unit having a phenolic hydroxyl group in a side chain and a recurring unit having an amino group in a side chain, as a polymeric compound serving as the (A) component and the (C) component. |
