| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which corrects variations in the periods of time capable of holding information regardless of characteristics of transistors in a memory circuit.SOLUTION: Another current path is added against leakage current of a transistor. The amount of current flowing through another current path is set so as to be larger than the amount of the leakage current of the transistor, so that variations in the periods of time during which information can be kept regardless of the characteristics of the transistors is corrected. As configuration, in order that the leakage current does not flow to the transistor, an element is added in parallel to a capacitor and another current path is provided.</p> |
