| 发明名称 |
METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM THERMISTOR SENSOR |
| 摘要 |
Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAly(N1-wOw)z (where 0.70≦y/(x+y)≦0.95, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase. |
| 申请公布号 |
US2015023394(A1) |
申请公布日期 |
2015.01.22 |
| 申请号 |
US201314380791 |
申请日期 |
2013.02.21 |
| 申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
Fujita Toshiaki;Tanaka Hiroshi;Inaba Hitoshi;Fujiwara Kazutaka;Nagatomo Noriaki |
| 分类号 |
H01C7/00;C23C14/00;C23C14/06;G01K7/22;C30B29/38 |
主分类号 |
H01C7/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A metal nitride material for a thermistor, consisting of a metal nitride represented by the general formula: TixAly(N1-wOw)z (where 0.70≦y/(x+y)≦0.95, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. |
| 地址 |
Tokyo JP |
