| 摘要 |
<p>To improve light emitting efficiency, a light emitting device according to an embodiment includes: a light emitting structure which includes a support member, a second electrode layer arranged on the support member, a first semiconductor layer arranged on the second electrode layer, a second semiconductor layer, and an active layer located between the first semiconductor layer and the second semiconductor layer; an interlayer dielectric which is arranged between the second electrode layer and the first semiconductor layer and insulates the second electrode layer and the first semiconductor layer; a connection electrode which electrically connects the plural regions of the second electrode layer and the plural regions of the second semiconductor layer; and a first electrode layer which is electrically connected to the first semiconductor layer. The interlayer dielectric may include a first insulating layer having at least compressive stress and a second insulating layer having tensile stress.</p> |
