| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent displacement of an electron beam generated when drawing a pattern of a lithography field on a lithography material, by devising a length and arrangement of an intermediate electrode constituting an electric field lens in a magnetic field lens or by providing a diaphragm at the center of the intermediate electrode of the electric field lens to prevent an ion gas from being accumulated inside the electric field lens. <P>SOLUTION: An electron beam lithography apparatus comprises: an electric field lens for changing a focusing state of an electron beam projected on a lithography material, the lens including: a cylindrical intermediate electrode through which the electron beam passes; a top electrode disposed at an upstream side of the intermediate electrode; and a bottom electrode disposed at a downstream side of the intermediate electrode. The intermediate electrode is arranged at the center of a magnetic field generated by a magnetic field lens, and is provided so that at least one end thereof comes to a position where no ion trap is formed by a magnetic field generated by the magnetic field lens and an electric potential wall formed at an end position of the intermediate electrode. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
