| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a low-resistance electrode with high reliability on SiC at a low cost using a Ni silicide. <P>SOLUTION: A Ni layer 12 is formed on an n-type SiC layer 11 (Fig. 1(a)). A Ni silicide layer 13 is formed by performing heat treatment to react Ni of the Ni layer 12 and Si of the n-type SiC layer 11 (Fig. 1(b)). In this state, the heat treatment is performed in an oxidative atmosphere (Fig. 1(d)). In a reduction atmosphere, for example, the heat treatment is performed at 300 to 400°C (Fig. 1(f): reduction processing step). Thereby, an oxide layer 15 is reduced to serve as a reduction layer 16 composed of Ni, etc. This reduction layer 16 can be removed by wet etching (Fig. 1(g): etching step). Then, a Ti/Al layer 30 which serves as a wiring layer is formed on the Ni silicide layer 13 (Fig. 1 (h)). <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
