| 摘要 |
To provide a surface acoustic wave device in which an increase in the acoustic velocity and an increase in the electromechanical coupling coefficient k 2 of surface acoustic waves can be achieved and the reflection coefficient can be further increased. A surface acoustic wave device (1) has a piezoelectric substrate having an R-plane, a-plane, or m-plane sapphire substrate (2a) and a LiNbO 3 film (2b) of (90°, 90°, -15° to 15°) or (0°, 90°, -15° to 15°) in terms of Euler angles (Æ, 0, ¨) formed on the sapphire substrate (2a), and electrodes (3) formed on the piezoelectric substrate and made of metal. |
