| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To inhibit a micro trench with ensuring a high etching rate in dry etching of an SiC substrate. <P>SOLUTION: An etching gas supplied from an etching gas source 4 contains an SF<SB POS="POST">6</SB>gas of not greater than 5% excluding 0%. A stage 11 on which an SiC substrate 2 is placed is arranged on a metal block 12. Bias applied from a high frequency power source 8B to the metal block 12 is 300 W and over (power density of 2.65 W/cm<SP POS="POST">2</SP>and over). <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
