| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film transistor using an oxide semiconductor favorable in electric characteristics. <P>SOLUTION: The thin film transistor has a structure including a gate electrode 20 formed on a substrate 10, a gate insulating film 30 on the gate electrode 20, an oxide semiconductor film 40 on the gate electrode 20 and the gate insulating film 30, and a metal film 70 on the oxide semiconductor film 40, wherein the oxide semiconductor film 40 has a region 50 (a high metal concentration region 50) higher in metal concentration than other regions of the oxide semiconductor film 40 on an interface with the metal film 70. A metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal in the high metal concentration region 50. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
