发明名称 High quality large scale single and multilayer graphene production by chemical vapor deposition
摘要 Systems and methods for synthesizing continuous graphene sheets are provided. The systems and methods include passing a catalyst substrate through a heated chemical vapor deposition chamber and exposing the substrate to a reaction gas mixture of hydrogen and hydrocarbon at a preselected location within the chamber. The reaction gas mixture can include hydrogen having a partial pressure of between about 0 Torr and 20 Torr, hydrocarbon having a partial pressure of between about 20 mTorr and about 10 Torr, and one or more buffer gases. The buffer gases can include argon or other noble gases to maintain atmospheric pressure within the chemical deposition chamber.
申请公布号 GB2516372(A) 申请公布日期 2015.01.21
申请号 GB20140011990 申请日期 2013.01.04
申请人 UT-BATTELLE, LLC 发明人 IVAN V VLASSIOUK;SERGEI N SMIRNOV;WILLIAM H PETER;ADRIAN S SABAU;SHENG DAI;PASQUALE F FULVIO;ILIA N IVANOV;NICKOLAY V LAVRIK;PANAGIOTIS G DATSKOS
分类号 C01B31/04;B32B9/00;C23C16/26 主分类号 C01B31/04
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