发明名称 薄膜トランジスタの製造方法
摘要 <p>A method of manufacturing a thin film transistor includes: forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an organic semiconductor layer on the gate insulating layer; forming an organic semiconductor pattern by selectively removing part of the organic semiconductor layer by means of a laser ablation method; and forming source and drain electrodes on the organic semiconductor pattern.</p>
申请公布号 JP5656049(B2) 申请公布日期 2015.01.21
申请号 JP20100120176 申请日期 2010.05.26
申请人 发明人
分类号 H01L21/336;G02F1/1368;H01L29/786;H01L51/05;H01L51/40 主分类号 H01L21/336
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